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aft20p060--4nr3 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 6.3 watt rf power ldmos transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 mhz. ? typical single--carrier w--cdma performance: v dd =28volts, i dq = 450 ma, p out = 6.3 watts avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 2110 mhz 18.6 20.0 9.4 --43.0 -- 1 3 2140 mhz 18.8 20.0 9.2 --42.5 -- 1 4 2170 mhz 18.9 20.0 9.1 --42.5 -- 1 4 1800 mhz ? typical single--carrier w--cdma performance: v dd =28volts, i dq = 450 ma, p out = 6.3 watts avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 1805 mhz 18.8 23.0 9.5 --43.0 -- 1 0 1840 mhz 19.1 23.8 9.4 --42.9 -- 1 5 1880 mhz 18.7 24.5 9.1 --42.9 -- 1 0 features ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications ? in tape and reel. r3 suffix = 250 units, 32 mm tape width, 13--inch reel. document number: aft20p060--4n rev. 0, 1/2013 freescale semiconductor technical data 1805?2170 mhz, 6.3 w avg., 28 v aft20p060--4nr3 (top view) rf outa /v dsa 31 figure 1. pin connections 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb note: exposed backside of the package is the source terminal for the transistors. o m -- 7 8 0 -- 4 plastic ? freescale semiconductor, inc., 2013. a ll rights reserved.
2 rf device data freescale semiconductor, inc. aft20p060--4nr3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature range t c --40 to +150 ? c operating junction temperature range (1,2) t j --40 to +225 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 77 ? c, 6.3 w cw, 28 vdc, i dq = 450 ma, 2140 mhz case temperature 80 ? c, 60 w cw, 28 vdc, i dq = 450 ma, 2140 mhz r ? jc 0.56 0.53 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iii table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics (4) gate threshold voltage (v ds =10vdc,i d =36 ? adc) v gs(th) 1.5 2.0 2.5 vdc gate quiescent voltage (v ds =28vdc,i d = 450 madc) v gs(q) ? 2.9 ? vdc fixture gate quiescent voltage (5) (v dd =28vdc,i d = 450 madc, measured in functional test) v gg(q) 5.3 5.8 6.3 vdc drain--source on--voltage (v gs =10vdc,i d =0.36adc) v ds(on) 0.1 0.2 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. each side of device measured separately. 5. v gg =2 ? v gs(q) . parameter measured on freescale test fixture, due to resist or divider network on the board. refer to test fixture layout. (continued)
aft20p060--4nr3 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 450 ma, p out = 6.3 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 17.5 18.9 20.5 db drain efficiency ? d 18.7 20.0 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 8.7 9.1 ? db adjacent channel power ratio acpr ? --42.5 --40.5 dbc input return loss irl ? -- 1 4 -- 7 db load mismatch (in freescale test fixture, 50 ohm system) i dq = 450 ma, f = 2140 mhz vswr10:1at32vdc,83wcwoutputpower (3 db input overdrive from 60 w cw rated power) no device degradation typical performances (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 450 ma, 2110--2170 mhz bandwidth p out @ 1 db compression point, cw p1db ? 60 ? w am/pm (maximum value measured at the p3db compression point across the 2110--2170 mhz frequency range. measurement made on a single path of the device under class ab conditions, p out =47w, i dq = 177 ma.) ? ? -- 2 0 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 70 ? mhz gain flatness in 60 mhz bandwidth @ p out =6.3wavg. g f ? 0.33 ? db gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.012 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) ? p1db ? 0.0002 ? db/ ? c 1. part internally matched both on input and output.
4 rf device data freescale semiconductor, inc. aft20p060--4nr3 figure 2. aft20p060--4nr3 test circuit component layout ? 2110--2170 mhz -- aft20p060--4n rev. 0 cut out area r3 c14 r2 c15 r1 c1 c2 c3 c7 c9 c10 c8 c12 c11 c6 c4 c5 c13 table 6. aft20p060--4nr3 test circuit compone nt designations and values ? 2110--2170 mhz part description part number manufacturer c1, c7, c8, c15 6.8 pf chip capacitors atc100b6r8ct500xt atc c2 0.8 pf chip capacitor atc100b0r8bt500xt atc c3 1.5 pf chip capacitor atc100b1r5bt500xt atc c4, c5 0.2 pf chip capacitors atc100b0r2bt500xt atc c6 5.6 pf chip capacitor atc100b5r6ct500xt atc c9, c10, c11, c12, c14 10 ? f chip capacitors c5750x7s2a106m kemet c13 470 ? f, 63 v electrolytic capacitor mcgpr63v477m13x26--rh multicomp r1 5.9 ? , 1/4 w chip resistor crcw12065r90fkea vishay r2, r3 2k ? , 1/4 w chip resistors crcw12062k00fkea vishay pcb 0.030 ? , ? r =2.55 ad255a arlon
aft20p060--4nr3 5 rf device data freescale semiconductor, inc. typical characteristics irl, input return loss (db) 2060 acpr f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 6.3 watts avg. -- 2 0 -- 4 -- 8 -- 1 2 -- 1 6 17 19 18.8 18.6 -- 4 7 22 21.5 21 20.5 -- 4 2 -- 4 3 -- 4 4 -- 4 5 ? d , drain efficiency (%) ? d g ps , power gain (db) 18.4 18.2 18 17.8 17.6 17.4 17.2 2080 2100 2120 2140 2160 2180 2200 2220 20 -- 4 6 -- 2 4 acpr (dbc) parc v dd =28vdc,p out =6.3w(avg.) i dq = 450 ma, single--carrier w--cdma irl parc (db) -- 0 . 8 -- 0 -- 0 . 2 -- 0 . 4 -- 0 . 6 -- 1 g ps 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im5--u im5--l im7--l im7--u v dd =28vdc,p out = 45 w (pep), i dq = 450 ma two--tone measurements, (f1 + f2)/2 = center frequency of 2140 mhz im3--l figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) -- 1 -- 3 5 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 0 10 15 25 50 40 30 20 10 0 ? d ? drain efficiency (%) -- 3 d b = 1 5 w 20 ? d acpr parc acpr (dbc) -- 6 0 0 -- 1 0 -- 2 0 -- 4 0 -- 3 0 -- 5 0 19.2 g ps , power gain (db) 19 18.8 18.6 18.4 18.2 18 g ps --1db=8w -- 2 d b = 11 w -- 5 1 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0. 01% probab ility on ccdf v dd =28vdc,i dq = 450 ma, f = 2140 mhz single--carrier w--cdma 60
6 rf device data freescale semiconductor, inc. aft20p060--4nr3 typical characteristics 1 acpr p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 15 21 0 60 50 40 30 20 ? d , drain efficiency (%) g ps , power gain (db) 20 19 10 100 10 -- 6 0 acpr (dbc) 18 17 16 0 -- 3 0 -- 4 0 -- 5 0 figure 7. broadband frequency response 11 23 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 450 ma 19 17 15 gain (db) 21 13 1800 1900 2000 2100 2200 2300 2400 2500 2600 -- 3 0 30 20 10 0 -- 1 0 irl (db) -- 2 0 gain v dd =28vdc,i dq = 450 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probabilit y on ccdf irl 2140 mhz g ps 2170 mhz 2110 mhz 2140 mhz 2110 mhz 2170 mhz 2170 mhz ? d 2140 mhz 2110 mhz
aft20p060--4nr3 7 rf device data freescale semiconductor, inc. alternate characterization ? 1805--1880 mhz figure 8. aft20p060--4nr3 test circuit component layout ? 1805--1880 mhz aft20p060--4n rev. 0 cut out area r3 c14 r2 c15 r1 c1 c2 c3 c7 c9 c10 c8 c12 c11 c6 c4 c5 c13 c17 c16 table 7. aft20p060--4nr3 test circuit com ponent designations and values ? 1805--1880 mhz part description part number manufacturer c1 11 pf chip capacitor atc100b110jt500xt atc c2, c5 1.1 pf chip capacitors atc100b1r1bt500xt atc c3 1.8 pf chip capacitor atc100b1r8bt500xt atc c4 0.5 pf chip capacitor atc100b0r5bt500xt atc c6 15 pf chip capacitor atc100b150jt500xt atc c7, c8, c15 12 pf chip capacitors atc100b120jt500xt atc c9, c10, c11, c12, c14 10 ? f chip capacitors c5750x7s2a106m kemet c13 470 ? f, 63 v electrolytic capacitor mcgpr63v477m13x26--rh multicomp c16 2.7 pf chip capacitor atc100b2r7bt500xt atc c17 3 pf chip capacitor atc100b3r0bt500xt atc r1 5.9 ? , 1/4 w chip resistor crcw12065r90fkea vishay r2, r3 2k ? , 1/4 w chip resistors crcw12062k00fkea vishay pcb 0.030 ? , ? r =2.55 ad255a arlon
8 rf device data freescale semiconductor, inc. aft20p060--4nr3 typical characteristics ? 1805--1880 mhz irl, input return loss (db) 1760 f, frequency (mhz) figure 9. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 6.3 watts avg. -- 1 6 0 -- 4 -- 8 -- 1 2 17.4 19.4 19.2 19 -- 4 7 26 25 24 23 -- 4 2 -- 4 3 -- 4 4 -- 4 5 ? d , drain efficiency (%) ? d g ps , power gain (db) 18.8 18.6 18.4 18.2 18 17.8 17.6 1780 1800 1820 1840 1860 1880 1900 1920 22 -- 4 6 -- 2 0 acpr (dbc) irl parc (db) -- 1 -- 0 . 2 -- 0 . 4 -- 0 . 6 -- 0 . 8 -- 1 . 2 g ps input signal par = 9.9 db @ 0.01% pr obabilit y on ccdf v dd =28vdc,p out =6.3w(avg.) i dq = 450 ma, single--carrier w--cdma 3.84 mhz channel bandwidth acpr parc 1 acpr p out , output power (watts) avg. figure 10. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 15 21 0 60 50 40 30 20 ? d , drain efficiency (%) g ps , power gain (db) 20 19 10 100 10 -- 6 0 acpr (dbc) 18 17 16 0 -- 3 0 -- 4 0 -- 5 0 figure 11. broadband frequency response 8 20 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 450 ma 16 14 12 gain (db) 18 10 1600 1650 1700 1750 1800 1850 1900 1950 2000 -- 2 0 10 5 0 -- 5 -- 1 0 irl (db) -- 1 5 gain irl 1840 mhz g ps 1805 mhz 1880 mhz ? d 1880 mhz 1840 mhz 1805 mhz 1840 mhz 1880 mhz v dd =28vdc,i dq = 450 ma single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probab ility on ccdf 1805 mhz
aft20p060--4nr3 9 rf device data freescale semiconductor, inc. package dimensions
10 rf device data freescale semiconductor, inc. aft20p060--4nr3
aft20p060--4nr3 11 rf device data freescale semiconductor, inc.
12 rf device data freescale semiconductor, inc. aft20p060--4nr3 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 jan. 2013 ? initial release of data sheet
aft20p060--4nr3 13 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2013 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: aft20p060--4n rev. 0, 1/2013

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